Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate  

作　　者：田密 修向前 张荣 华雪梅 刘战辉 韩平 谢自力 郑有炓 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University

出　　处：《Journal of Semiconductors》2009年第9期13-15,共3页半导体学报（英文版）

基　　金：Project supported by State Key Development Program for Basic Research of China(No.2006CB6049);the National Hi-Tech Researchand Development Program of China(No.2006AA03A142);the National Natural Science Foundation of China(Nos.60721063,60731160628,60820106003)

摘　　要：A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence （PL） measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence （PL） measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.

关 键 词：γ-LiAlO2 GAN HVPE ANISOTROPY PL spectra 

分 类 号：TN304[电子电信—物理电子学]