Ag-Cu-Ti活性法封接AlN陶瓷与Mo-Cu合金  

Active Brazing AlN Ceramic and Mo-Cu Alloy Using Ag-Cu-Ti

作　　者：陆艳杰[1] 张小勇[1] 楚建新[1] 秦明礼[2] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]北京科技大学,北京100083

出　　处：《真空电子技术》2009年第4期14-18,共5页Vacuum Electronics

摘　　要：用AgCu—Ti焊料在真空条件下活性法封接了AIN陶瓷和Mo—Cu合金，用EBSD，EDS，XRD等手段分析了界面结构，对封接件进行了强度和气密性测试。结果显示：焊料中的活性组元Ti与陶瓷反应，形成厚2～3μm，紧邻陶瓷连续分布的反应层；靠近AlN一侧，焊层为AgCu共晶组织，靠近合金一侧，焊层以富Cu相为主。整个界面产物主要有TiN，Cu2Ti，AgTi3，AgTi，Ni3Ti等化合物。连接件的剪切强度στ=172．94MPa，弯曲强度στ=69．59MPa，气密性1．0×10^-11=Pa·m^3／s。Aluminum nitride ceramic and Mo-Cu alloy have been active brazed using Ag-Cu-Ti active filler metal in the vacuum condition. The rnicrostructure and phases have been researched by SEM, EDS, XRD. The strength and gas tightness have been investigated. The results show that there is a chemical reaction layer with the thickness is about 2-3μm continuous locating near AIN ceramic, and XRD indicates that it is TiN. It shows that in the welding layer, the eutectic structure of AgCu mainly distributes on the interface of AIN ceramic, however the copper rich layer locates on the interface of Mo-Cu alloy, and the main products consist of TiN, Cu2 Ti, AgTi3, AgTi, NiaTi etc. The bending strength and shear strength are ab=69.59 MPa and στ=172.94 MPa, respectively, the leakage rate is 1.0×10^-11 Pa ·m^3/s.

关 键 词：ALN陶瓷 活性封接 Ag—Cu-Ti焊料 微观结构 

分 类 号：TB756[一般工业技术—真空技术]