GaN基三阱量子级联激光器结构的垒层Al组分分析  

STUDY OF Al COMPOSITION IN BARRIER OF GaN-BASED QUANTUM CASCADE LASER

作　　者：陈贵楚[1,2] 范广涵[1] 李述体[1] 邢海英[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]肇庆学院物理系,广东肇庆526061

出　　处：《华南师范大学学报（自然科学版）》2009年第3期43-46,共4页Journal of South China Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50602018);粤港关键领域重点突破项目(2007A010501008);广州市LED工业化研究基地项目(2004U13D0021)

摘　　要：基于不同的研究者报道的AlGaN/GaN三阱式量子级联激光器的垒层有不同的Al组分,通过对激光器一个周期单元的一维薛定谔方程与泊松方程进行自洽求解,得到了能带与电子波函数的分布情况,并且计算了在近共振条件下偶极跃迁矩阵元与垒层Al组分的关系,得到了Al组分的优化结果.In order to optimize consistent calculation to the sc the Al composition of the barrier in GaN - based quantum cascade laser, a self - hrodinger and poisson equations of one periods in QCL has been done. The band structure and the electron envelope function are obtained. The relation between dipole matrix mement and A1 composition of the barrier is illuminated. The results show that the dipole matrix mement will be the largest when the optimized A1 composition is equal to 0.15.

关 键 词：量子级联激光器 垒层 AL组分 跃迁矩阵元 

分 类 号：O471.5[理学—半导体物理]