固体C_(60)/p-GaAs异质结的整流特性和界面电子态  

Rectification Properties and Interface States of Heterojunctions Between Solid C 60 and p type GaAs

作　　者：陈开茅[1] 陈莹[1] 张亚雄[1] 金泗轩[1] 吴克[1] 李传义[1] 顾镇南[2,3] 周锡煌[2,3] 刘鸿飞 

机构地区：[1]北京大学物理系 [2]北京大学化学系 [3]北京有色金属研究总院

出　　处：《Journal of Semiconductors》1998年第9期650-655,共6页半导体学报（英文版）

基　　金：国家教委优秀年轻教师基金;国家自然科学基金

摘　　要：我们将Ｃ６０膜淀积在ｐ－ＧａＡｓ〈１００〉衬底上，做成了固体Ｃ６０／ｐ－ＧａＡｓ异质结并对其电学性质做了研究．异质结的理想因子接近于１，在偏压为±１Ｖ时，其整流比大于１０６倍．在正向偏压固定的情况下，结电流的对数与温度倒数成线性函数关系，从关系中求出异质结有效势垒高度为０．６３ｅＶ．用深能级瞬态谱（ＤＬＴＳ）技术在Ｃ６０／ｐ－ＧａＡｓ界面上观测到一个空穴陷阱，其能级为ＧａＡｓ价带之上０．４５ｅＶ，密度为２．４×１０１１／ｃｍ２．Abstract Solid C 60 /p type GaAs heterojunctions have been made by deposition of solid C 60 film on the epitaxial p type GaAs(100)substrates and their electrical characteristics have been studied. The ideality factor n is close to 1 and the rectifying ratio is greater than 10 6 at a bias of ±1V. The logarithm of the current at a fixed forward bias is a linear function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is detemined to be 0.63eV. A trap with an energy level 0.45eV above the valence band of GaAs at the C 60 /GaAs interface has been observed by the deep level transient spectroscopy technique.

关 键 词：碳60 砷化镓 异质结 整流特性 界面电子态 

分 类 号：TN304.18[电子电信—物理电子学] TN304.23