LP-MOCVD制备AlGaInP高亮度橙黄色发光二极管  

AlGaInP High Brightness Orange Light Emitting Diodes Manufactured by LP MOCVD

作　　者：王国宏[1,2] 马骁宇[1,2] 曹青[1,2] 张玉芳 王树堂[1,2] 李玉璋 陈良惠[1,2] 

机构地区：[1]中国科学院半导体研究所 [2]光电子器件国家工程研究中心

出　　处：《Journal of Semiconductors》1998年第9期712-714,共3页半导体学报（英文版）

基　　金：国家"863"计划

摘　　要：利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ结构橙黄色发光二极管．引入厚层Ａｌ０．７Ｇａ０．３Ａｓ电流扩展层和Ａｌ０．５Ｇａ０．５Ａｓ－ＡｌＡｓ分布布拉格反射器（ＤＢＲ）．２０ｍＡ工作条件下，工作电压１．９Ｖ，发光波长峰值在６０５ｎｍ，峰值半宽为１８．３ｎｍ，管芯平均亮度达到２０ｍｃｄ，最大２９．４ｍｃｄ，透明封装成视角（２θ１／２）１５°的ＬＥＤ灯亮度达到１ｃｄ．Abstract AlGaInP high brightness orange light emitting diodes (LEDs) are fabricated by low pressure metalorganic chemical vapor deposition(LP MOCVD) technology. AlGaInP double heterojunction structure is used as active layer. 10 pairs of Al 0.5 Ga 0.5 As/AlAs distributed Bragg reflector and 7μm Al 0.7 Ga 0.3 As current spreading layer are employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA, the emitting peak wavelength of LEDs is 605nm with18 3nm FWHM and 0 225mW radiation power. Brightness of the LED chips and LED lamps with 15° viewing angle(2 θ 1/2 ) reach 29 4mcd and 1000mcd respectively.

关 键 词：LP-MOCVD 外延生长 橙黄色 发光二极管 

分 类 号：TN304.054[电子电信—物理电子学] TN383.04