悬臂梁接触式RF MEMS开关的关键工艺研究  

Study on key fabrication process of RF MEMS switch with cantilever structure

作　　者：吴清鑫[1] 陈光红[1] 于映[2] 罗仲梓[3] 

机构地区：[1]苏州市职业大学电子信息工程系,江苏苏州215104 [2]南京邮电大学通讯与信息工程学院,江苏南京210003 [3]厦门大学萨本栋微机电研究中心,福建厦门361005

出　　处：《传感器与微系统》2009年第9期118-120,共3页Transducer and Microsystem Technologies

基　　金：国家青年基金资助项目(60301006);福建省自然科学基金资助项目(A0310012)

摘　　要：采用厚度为2μm的Au制作成共平面波导（CPW）、聚酰亚胺作为牺牲层、PECVD法淀积Si3N4薄膜作为悬臂梁，制作成悬臂梁接触式RF MEMS开关。着重对开关的关键工艺-CPV的Au剥离工艺和悬臂梁制作工艺进行研究，讨论了工艺中存在的问题及其解决方法。通过实验获得较佳的工艺参数，并制作出驱动电压为12-20V的悬臂梁接触式RF MEMS开关。Co-planar wave-guide is coated with 2μm thick Au film. Polyimide is used as sacrificial layer. Si3N4 suspending membrane is grown by plasma enhanced chemical vapor deposition （PECVD）. RF MEMS switch with cantilever structure is fabricated by the above processes. The key fabrication technology of RF MEMS switch is discussed including lift-off technology of Au film as co-planar wave-guide and fabrication process of suspending membrane. The optimum process parameters are obtained by different experiments. RF MEMS switch with cantilever structure with 12-20 V actuation voltage is sucessfully fabricated.

关 键 词：射频MEMS开关 剥离 悬臂梁 制作工艺 

分 类 号：TN304[电子电信—物理电子学]