变掺杂GaAs光电阴极的研究进展  

Research Progress in Varied-doping GaAs Photocathodes

作　　者：陈怀林[1] 牛军[1,2] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094 [2]南阳理工学院电子与电气工程系,南阳473004

出　　处：《材料导报》2009年第19期99-103,113,共6页Materials Reports

基　　金：国家自然科学基金(60678043);教育部高等学校博士点基金资助项目(20050288010)

摘　　要：从变掺杂阴极的结构种类、变掺杂GaAs光电阴极的光电发射机理、制备技术以及变掺杂结构对阴极性能的影响等方面介绍了当前国内研究变掺杂GaAs光电阴极的进展。目前该工作还处于起步阶段,理论研究还有待于进一步深入。开展变掺杂阴极研究是我国走自主创新道路、提高国内三代微光器件性能的有效途径。In this review, the present research progress in varied-doping GaAs photocathodes is summarized from the cases of the structure kinds, the mechanism of photoelectricity emission, the preparation technique and the influence of varied-doping structure on the performance of the cathodes. This work is still in the start stage right now, and needs the further investigation in theory. Researching varied-doping GaAs photocathodes is available to enhancing the performance of local third-generation low light level devices by independent innovation.

关 键 词：GAAS 光电阴极 变掺杂 

分 类 号：TN15[电子电信—物理电子学] TN104.3