Ti离子注入和退火对ZnS薄膜结构和光学性质的影响  

Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films

作　　者：苏海桥[1] 薛书文[2] 陈猛[1] 李志杰[1] 袁兆林[1] 付玉军[3] 祖小涛[1] 

机构地区：[1]电子科技大学应用物理系,成都610054 [2]湛江师范学院物理系,湛江524048 [3]兰州大学物理科学与技术学院,兰州730000

出　　处：《物理学报》2009年第10期7108-7113,共6页Acta Physica Sinica

基　　金：教育部新世纪优秀人才支持计划(批准号:NCET-04-0899)资助的课题~~

摘　　要：利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80keV,剂量1×1017cm-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700℃.利用X射线衍射(XRD)研究了薄膜结构的变化,利用光致发光(PL)和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500℃退火1h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄膜发光强度随退火温度的上升而增强.Ti ions were implanted into ZnS films at a dose of 1×10 17ions/cm2 and energy of 80 keV by vacuum evaporation.After ion implantation,the as-implanted sample was annealed in argon ambient at different temperatures from 500 ℃ to 700 ℃.The effects of ion implantation and post-thermal annealing on the structural and optical properties of ZnS films were investigated by x-ray diffraction（XRD）,photoluminescence（PL）and optical absorption.The results showed that the diffraction peak intensity was recovered by annealing at 500 ~C. The optical absorption in the visible region increased after Ti ion implantation and the absorption edge blueshifted with the increasing annealing temperature. The PL emission intensity increased with the increasing annealing temperature.

关 键 词：ZNS薄膜 离子注入 X射线衍射 光致发光 

分 类 号：TN304.25[电子电信—物理电子学]