生长温度对AlGaInN四元合金薄膜性质的影响  

Influence of growth temperature on properties of AlGaInN quaternary epilayers

作　　者：刘启佳[1] 邵勇[1] 吴真龙[1] 徐洲[1] 徐峰[1] 刘斌[2] 谢自力[2] 陈鹏[1,2] 

机构地区：[1]南京大学扬州光电研究院,扬州225009 [2]南京大学物理系,南京210093

出　　处：《物理学报》2009年第10期7194-7198,共5页Acta Physica Sinica

基　　金：南京大学扬州光电研究院研发基金(批准号:2008002);国家重点基础研究发展计划(批准号:2006CB6049);国家高技术研究发展计划(批准号:2006AA03A118;2006AA03A142);国家自然科学基金(批准号:60721063;60676057;60776001;60820106003);江苏省自然科学基金(批准号:BK2008019)资助的课题~~

摘　　要：利用金属有机物化学气相沉积(MOCVD)方法在c面蓝宝石(α-Al2O3)衬底上外延生长了铝镓铟氮(AlGaInN)四元合金薄膜.合金薄膜的生长温度设置为800,850,900℃,对获得的样品进行对比分析发现:随着生长温度的升高,合金中的In组分单调降低,而Al组分则基本保持恒定.当合金薄膜的生长温度升高到850℃时,薄膜表面开始出现V型缺陷;生长温度进一步升高到900℃时,偏析In原子的脱吸附作用加剧,V型缺陷成核被弱化,使V型缺陷的特征尺寸和分布密度大幅降低.Aluminum gallium indium nitride（AlGaInN）quaternary epilayers were prepared by metalorganic chemical vapor deposition（MOCVD）on c-plane sapphire（α-Al2O3）substrates.Three samples were grown under different temperatures of 800 ℃,850 ℃ and 900 ℃.It is found that the In composition monotonically decreases with the increasing growth temperature,while the Al composition is nearly invariable.The V-pits appeared when the growth temperature increases to 850 ℃,and the size and density of V-pits drastically decrease and the nucleation of V-pits is passivated when the growth temperature rises to 900℃ due to the desorption enhancement of segregated In atoms.

关 键 词：AlGaInN 金属有机物化学气相沉积 生长温度 

分 类 号：TN304.2[电子电信—物理电子学] TN304.25