多晶硅纳米薄膜压阻式压力传感器  

Polysilicon Nano-film Piezoresistive Pressure Sensor

作　　者：王健[1,2] 揣荣岩[1] 何晓宇[3] 刘伟[3] 张大为[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110142 [2]沈阳化工学院,辽宁沈阳110142 [3]中国电子科技集团公司第四十七研究所,辽宁沈阳110032

出　　处：《仪表技术与传感器》2009年第9期6-8,共3页Instrument Technique and Sensor

基　　金：国家自然科学基金资助项目(60776049);辽宁省科学技术基金资助项目(20072036)

摘　　要：多晶硅纳米薄膜具有优越的应变灵敏特性和稳定的温度特性。为了使这种良好的压阻特性得到实际应用,文中给出了多晶硅纳米薄膜压阻式压力传感器的设计方法。根据多晶硅纳米薄膜压阻特性和硅杯腐蚀技术条件确定弹性膜片结构,并采用有限元分析方法对弹性膜片尺寸以及应变电阻分布进行了优化。依据优化设计结果试制了压力传感器芯片。实验表明该传感器工艺简单、高温特性好、灵敏度高。Polysilicon nano-films have advantage strain sensitivity and stable temperature characteristic. In order to apply these characteristic, this paper introduced a method of designing a polysilicon nano-film piezoresistive pressure sensor. According to polysilicon nano-films piezoresistive characteristic and conditions of etch technologies for the silicon cup, the elastic membrane structure was designed. Then dimensions of the membrane and distribution of strain resistors were optimized by finite-element anal- ysis method. Based on the design, the chip of pressure sensor was fabricated using conventional semiconductor techniques. The test data show that the chips possess excellent temperature and sensitivity.

关 键 词：压力传感器 有限元 多晶硅纳米薄膜 

分 类 号：TK312[动力工程及工程热物理—热能工程]