磁控溅射制备In掺杂ZnO薄膜及NO_2气敏特性分析  

Study on NO_2 gas sensing characteristics of In-doped ZnO thin films prepared by RF magnetron sputtering

作　　者：方亮[1,2] 彭丽萍[1] 杨小飞[1] 黄秋柳[1] 周科[1] 吴芳[1] 刘高斌[1] 马勇[3] 

机构地区：[1]重庆大学应用物理系,重庆400030 [2]重庆大学光电技术及系统教育部重点试验室,重庆400030 [3]重庆师范大学应用物理系,重庆400047

出　　处：《重庆大学学报（自然科学版）》2009年第9期1002-1005,1015,共5页Journal of Chongqing University

基　　金：重庆市自然科学基金资助项目(CSTC2007BB4137);重庆大学研究生创新基金资助项目(200904A1B0010314;200801A1B0060265);重庆大学'211工程'三期创新人才培养计划建设项目(S-09109)

摘　　要：利用射频磁控溅射技术在玻璃衬底上成功制备了In掺杂的ZnO(ZnO∶In)薄膜。X射线衍射(XRD)和原子力显微镜(AFM)的研究结果显示所制备的ZnO∶In为纤锌矿的多晶薄膜,具有高度C轴择优取向。气敏研究结果表明ZnO∶In薄膜对NO2气体有较强的敏感性,最佳工作温度为273℃,其敏感度与薄膜的厚度和NO2气体的体积分数有关。ZnO∶In薄膜对较高体积分数的NO2气体的灵敏度较高,而薄膜比厚膜的灵敏度高,厚度为90 nm的薄膜在273℃时对体积分数为2×10-5的NO2气体的敏感度高达16,表明ZnO∶In薄膜具有检测较低体积分数NO2的能力。In-doped ZnO thin films were prepared on glass substrate by RF magnetron sputtering. The result of XRD and AFM shows that the films are polycrystalline with high c-axis orientation. The study of gas sensing reveals that the films are sensitive to NO2 and the best sensibility occurs at 273 ℃; the sensibility is concerned with the concentration of NO2 and the film thickness. The ZnO＇In films are more sensitive to the NO2 gas with higher concentration of NO2 and thinner films have a better sensitivity. Exposed to 2 × 10^-5 NO2 at 273 ℃, the 90nm thick film has a sensibility of 16, indicating＇that ZnO; In films can be used to measure NO2 with a low concentration.

关 键 词：氧化锌薄膜 铟掺杂 磁控溅射 二氧化氮 

分 类 号：TN304.24[电子电信—物理电子学] TB43[一般工业技术]