氧化铝缓冲层对ZnO薄膜性质的影响  

Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film

作　　者：王新[1] 向嵘[1] 陈立[1] 姜德龙[1] 李野[1] 王国政[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2009年第3期407-409,共3页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省科技发展计划资助项目(20080170)

摘　　要：采用反应磁控溅射的方法在石英衬底上制备了一层Al2O3薄膜,并将其作为后续ZnO薄膜生长的缓冲层。然后,采用反应磁控溅射的方法在Al2O3缓冲层上制备了ZnO薄膜。对比研究了引入Al2O3缓冲层前后,ZnO薄膜的结构和光学特性。通过引入Al2O3缓冲层,发现ZnO薄膜样品的(002)方向x射线衍射峰的半峰宽(FWHM)明显减小,光致发光谱中与缺陷相关的可见发光峰强度明显减弱,吸收光谱中的吸收边变得更加陡峭。这些结果表明引入Al2O3缓冲层后,ZnO薄膜的结构和光学特性得到了很大改善,为制备高质量ZnO薄膜提供了参考。Firstly, a layer of Al2O3 thin film was grown on quartz substrate by reactive radio-frequency magnetron sputtering method, this Al2O3 thin film can be using as the buffer layer for the following growth of ZnO thin film, and then ZnO thin films were grown on the Al2O3 buffer layer also by this method. The structure and optical properties of ZnO thin films with and without the Al2O3 buffer layer were mainly investigated. By growing the Al2O3 buffer layer, the full-width at the half maximum of （002） diffraction peak from ZnO thin film obviously become smaller, the defect-related visible emission intensity in the luminescence spectrum （PL） obviously decreased and the absorption edge became steeper in the absorption spectrum. It is indicated that the structure and optical qualities of ZnO thin film can be great improved by introduce the Al2O3 buffer layer, thus this work provides great help for the fabrication of high quality ZnO thin film.

关 键 词：ZNO薄膜 Al2O3缓冲层 X射线衍射 发光光谱 吸收光谱 

分 类 号：TN304[电子电信—物理电子学]