N型4H-SiC ECR氢等离子体处理研究  

Study on ECR Hydrogen Plasma Treatment of N-type 4H-SiC

作　　者：王德君[1] 高明超[1] 朱巧智[1] 秦福文[2] 宋世巍[2] 王晓霞[1] 

机构地区：[1]大连理工大学电子与信息工程学院,辽宁大连116024 [2]大连理工大学三束材料改性国家重点实验室,辽宁大连116024

出　　处：《固体电子学研究与进展》2009年第3期334-338,416,共6页Research & Progress of SSE

基　　金：国家科技部重大基础研究前期研究专项(2005CCA00100);辽宁省自然科学基金(20072192);教育部新世纪优秀人才支持计划(NCET-06-0278);教育部留学回国人员科研启动基金(20071108)

摘　　要：采用电子回旋共振(ECR)氢等离子体对n型4H-SiC(0001)表面进行处理,并利用原位高能电子衍射(RHEED)对处理过程进行实时监控。在200°C～700°C温度范围内获得的RHEED图像成条纹状且对比清晰,表明SiC表面原子排列规则,单晶取向性好,计算表明表面未发生重构。用X射线光电子能谱(XPS)技术对表面成分进行分析,结果显示,表面C/C-H污染物被去除、氧含量降低。N-type 4H-SiC（0001）surfaces were cleaned by hydrogen plasma with electronic cyclotron resonance（ECR）plasma system,and the whole process was monitored by in-situ reflection high energy electron diffraction（RHEED）.RHEED images from 200°C to 700°C showed that the surface atoms were regularly organized and had well orientation of single crystal.The calculation results showed that the surface was not reconstructed.The surface composition was analyzed using X-ray photoelectron spectroscopy（XPS）.The results presented that the C/C-H contaminations were removed from the 4H-SiC surfaces and the surface oxides reduced obviously.

关 键 词：碳化硅 氢等离子体 电子回旋共振等离子体 反射式高能电子衍射 X射线光电子能谱 

分 类 号：TN305[电子电信—物理电子学]