6H-SiC体材料在SF6/O2混合气体中的ICP刻蚀  

The Etching of Single Crystal 6H-SiC in Inductively Coupled SF_6/O_2 Plasma

作　　者：丁瑞雪[1] 杨银堂[1] 韩茹[2] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071 [2]西北工业大学航空微电子中心,西安710072

出　　处：《固体电子学研究与进展》2009年第3期343-346,共4页Research & Progress of SSE

基　　金：国家部委预研项目(No.51308030201);国家部委预研项目(No.51323040118)

摘　　要：采用SF6/O2作为刻蚀气体,对单晶6H-SiC材料的感应耦合等离子体(ICP)刻蚀工艺进行了研究。分析了ICP功率、偏置电压、气体混合比等工艺参数对刻蚀速率和刻蚀质量的影响。结果表明,刻蚀速率随着ICP功率及偏置电压的增大而提高,刻蚀表面质量随偏置电压及O2的含量的增大而降低,而ICP功率的变化对刻蚀质量影响不大。混合气体中O2含量为20%时刻蚀速率达到最大值,同时加入氧气后形成易于充电的SiFxOy中间层,从而促进了微沟槽的形成。Inductively coupled plasma（ICP）etching of single crystal 6H-silicon carbide（SiC）was investigated using oxygen-added sulfur hexafluoride（SF6）plasmas.The observed relations between the etch rate and inductive power,the concentration of the etch gases,and different bias voltages are discussed.Experimental results show that the etch rate trends to increase with the increase of ICP coil power and bias voltage.With the increase of bias voltage and the concentration of oxygen,the etched surface quality decreases.Inductive power has little influence on the etched surface quality. The maximum mixture. The addition of O2 has influence on SiFxOy layer, which has a greater tendency to etch rate is obtained with 20% O2 in SF6/O2 gas the effect of microtrench due to the formation of a charge than SiC.

关 键 词：碳化硅 感应耦合等离子体 刻蚀速率 微沟槽 

分 类 号：TN304.2[电子电信—物理电子学] TN405