GSMBE生长掺杂Si及GeSi/Si合金及其电学性质研究  

GSMBE Growth and Doping of Si, SiGe/Si Alloys and Their Electric Characterizations

作　　者：刘学锋[1] 刘金平[1] 李建平[1] 李灵霄[1] 孙殿照[1] 孔梅影[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料中心

出　　处：《Journal of Semiconductors》1998年第12期896-902,共7页半导体学报（英文版）

基　　金：国家"九五"攻关项目

摘　　要：用气态源分子束外延法对Ｓｉ及ＧｅＳｉ／Ｓｉ合金进行了Ｎ、Ｐ型掺杂研究，结果表明，杂质在外延层中的掺入行为取决于生长过程中乙硅烷与相关掺杂气体的竞争吸附与脱附过程，所获得的Ｎ型及Ｐ型载流子浓度范围分别为１．５×１０１６～４．０×１０１９ｃｍ－３及１．０×１０１７～２．０×１０１９ｃｍ－３，基于对Ｎ型Ｓｉ外延材料中迁移率与杂质浓度、温度的关系，我们用Ｋｌａａｓｓｅｎ模型对实验结果进行拟合，分析了不同散射机制，特别是少数载流子电离散射对迁移率的影响．此外，样品的二次离子谱及扩展电阻分析表明，Ｎ、Ｐ型杂质浓度纵向分布较为均匀，无明显的偏析现象．Abstract Doping characterizations of Si and SiGe layers grown by GSMBE have been studied. It is found that the machanism for the dopants incorporation into the epitaxial layers depend on the competitive adsorption and desorption processes of the reactive gas molecules on the surface. The carrier concentration of the N type and P type epitaxial layers can be well controlled and varied in the ranges of 1 5×10 16 ～4 0×10 19 cm -3 and 1 0×10 17 ～2 0×10 19 cm -3 , respectively. Based on a unified mobility model proposed by Klaassen, the experimental results are analysed by simulations and taken into ancount the minority impurity scattering. For the carrier concentration distribution along the growth direction, no strong surface segregation is observed.

关 键 词：GSMBE 硅 硅化锗 掺杂 外延生长 

分 类 号：TN304.054[电子电信—物理电子学] TN304.24