衬底温度对纳米Si-SiO_x薄膜的结构和组分的影响  

Effect of Substrate Temperature on Structure and Composition of Si Nanocrystal SiO x

作　　者：张仕国[1] 张伟[1] 袁骏[1] 樊瑞新[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《Journal of Semiconductors》1998年第12期903-907,共5页半导体学报（英文版）

摘　　要：本文报道用真空蒸发制备含氧硅薄膜的技术，研究了衬底温度对薄膜结构和组分的影响．实验发现在真空为５×１０－３Ｐａ、衬底温度在２８０～４８０℃范围内，随着温度的提高，薄膜由非晶、转化为纳米晶体、再转化为多晶，氧含量也随着温度的提高而增加。Abstract The paper reports the deposition of Si films containing oxygen prepared by vacuum evaporation. The effect of substrate temperature on the structure and composition of Si nanocrystal SiO x is studied. In the deposition, the vacuum pressure remains about 5×10 -3 Pa and the substrate temperatures are changed from 280 to 840℃. It is observed that the Si film structure is changed from amorphous to nanocrystal to polycrystal and the oxygen concentration is increased, with increased substrate temperature. The increase in the surface mobility of evaporated Si atoms and the oxidation rate may be responsible for the change in the structure and the composition, respectively.

关 键 词：纳米硅 衬底 氧化硅 半导体薄膜技术 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055