氮化硅结合碳化硅材料的研究  

Reseach of silicon nitride bond silicon carbide materials

作　　者：梁振海[1] 郝小勇[1] 吴树芳[1] 

机构地区：[1]咸阳陶瓷研究设计院,712000

出　　处：《陶瓷》1998年第5期16-19,共4页Ceramics

摘　　要：本文系对省部级攻关项目“氮化硅结合碳化硅材料和制品的开发研究”研究部分的总结,分别对氮化硅结合碳化硅材料制备过程的颗粒级配,浆料外加剂,部分成形技术和准静态氮化工艺进行了研究.This paper is a summary of the plan 'Research & development of the material and product of SiC bonded by Si3N4.' It is about research of the particle size distribution. Additive of slip and some of technology of the form-ing. In addition isotatic pressing in the processing of the material of SiC bonded by Si3N4 is researched as well.

关 键 词：氮化硅 碳化硅 陶瓷 复合陶瓷 

分 类 号：TQ174.758[化学工程—陶瓷工业]