Research of high speed optical switch based on compound semiconductor  被引量:4

Research of high speed optical switch based on compound semiconductor

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作  者:WANG MingHua QI Wei YU Hui JIANG XiaoQing YANG JianYi 

机构地区:[1]Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China [2]School of Information and Electrical Engineerig, Zhejiang University City College, Hangzhou 310014, China

出  处:《Chinese Science Bulletin》2009年第20期3679-3684,共6页

基  金:Supported by the Key Fund of National Natural Science Foundation of China (Grant No. 60436020)

摘  要:High-speed optical switch and its array are the crucial components of all-optical switching system.This paper presents the analytical model of a total-internal-reflection(TIR) optical switch.By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure,the X-junction TIR switch and the Mach-Zehnder interference(MZI) switch are demonstrated at 1.55 μm.The measured results show that the extinction ratio of both switches exceeds 20 dB.The switching speed reaches the scale of 10 ns.High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 μm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.

关 键 词:光开关 化合物半导体 ALGAAS 公路货运 载流子注入 双异质结构 关键部件 交换系统 

分 类 号:TN929.11[电子电信—通信与信息系统] TN304.23[电子电信—信息与通信工程]

 

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