改善多指功率SiGe HBTs热稳定性的版图设计(英文)  

Layout Design of Multi-finger Power SiGe HBTs for Thermal Stability Improvement

作　　者：金冬月[1] 张万荣 谢红云[1] 沈珮[1] 胡宁[1] 甘军宁[1] 李佳[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《功能材料与器件学报》2009年第5期511-515,共5页Journal of Functional Materials and Devices

基　　金：National Natural Science Foundation of China (60776051 and 60376033);Beijing Municipal Natural Science Foun-dation,China (4082007);State 973 project, Beijing Municipal Education Committee,China (KM200710005015);Beijing Municipaltrans -century Talent Project (67002013200301);Young Science Foundation of BJUT (97002013200701);Ph.D Start Science Foundation of BJUT(52002013200701);the 6th Science and Technology Postgraduate Foundation of BJUT(ykj -2007-1970)

摘　　要：提出非均匀指间距结构功率SiGe HBTs的版图设计用以改善热稳定性。模拟和实验结果均表明,与传统的均匀指间距结构相比,非均匀指间距结构HBT的峰值结温和温度分布非均匀性均得到显著改善。上述改善归功于非均匀指间距结构HBT中心指间距的增加,从而有效阻止热流由外侧指流向中心指处。此外,与均匀指间距结构器件相比,其热阻改善13.71%,热退化功率水平提高22.8%。因此,模拟和实验均证明采用非均匀指间距结构HBT的版图设计可有效改善功率HBTs热稳定性。The layout design of a multi - finger power SiGe HBT with non - uniform finger spacing is proposed to improve the thermal stability. Compared with the traditional HBT with uniform finger spacing, both simulated and experimental results shown that the peak temperature and the non- uniformity of the temperature profile in the HBT with non -uniform finger spacing are improved markedly, which is ascribed to the increasing the spacing between fingers, and hence suppressing the heat flow from adjacent fingers to the center finger effectively. Furthermore, the thermal resistance is improved by 13.69% and the power level for thermal regression is increased by 22.8% compared with that of the uniform finger spacing device. Therefore, both simulation and experiment prove that the layout design of HBTs with non - uniform finger spacing is very useful for improving the thermal stability of power HBTs.

关 键 词：SIGE HBT 热稳定性 

分 类 号：TB34[一般工业技术—材料科学与工程]