InAs薄膜Hall器件  

InAs Thin Film Hall Elements

作　　者：周宏伟[1] 曾一平[1] 李歧旺[1] 卫微 王红梅[1] 孔梅影[1] 

机构地区：[1]中国科学院半导体所

出　　处：《传感器技术》1998年第5期19-21,共3页Journal of Transducer Technology

摘　　要：利用分子束外延（ＭＢＥ）生长的高迁移率ＩｎＡｓ外延层成功制备了的薄膜Ｈａｌ器件。这种Ｈａｌ器件具有灵敏度高、温度特性好等优点。室温下的积灵敏度和电压相关的灵敏度分别为１１ｍＶ／ｍＡ·ｋＧｓ和４０ｍＶ／Ｖ·ｋＧｓ（灵敏度比相同掺杂的ＧａＡｓＨａｌ器件高５０％）。在（２０～７０）℃温度区域内，内阻温度系数和Ｈａｌ电压温度系数分别为８×１０－４／℃，－２×１０－３／℃（恒流驱动）和－３×１０－３／℃（恒压驱动）。High-performance InAs thin film Hall elements(sensors)with high sensitivity low temperature coefficients are developed.The product sensitivity and voltage-related sensitivity of this Hall elements are as large as 11 mV/mA ·kGs and 40 mV/V ·kGs respectively.These values are 50% larger than the standard GaAs Hall elements at the same driving condition.The resistance temperature coefficient and Hall voltage coefficient are 8×10 -4 /℃,-2×10 -3 /℃(current-drive) and -3×10 -3 /℃(voltage-drive)respectively.

关 键 词：霍尔器件 积灵敏度 电压相关 电阻温度系数 

分 类 号：TN382[电子电信—物理电子学]