Si/SiGe/Si HBT频率特性的解析模型与模拟  

Analytical Models and Simulation of Frequency Characteristics of Si/SiGe/Si HBTs

作　　者：张万荣 罗晋生[2] 李志国[1] 孙英华[1] 穆甫臣[1] 程尧海[1] 陈建新[1] 沈光地[1] 

机构地区：[1]北京工业大学电子工程系,100022 [2]西安交通大学微电子研究所,710049

出　　处：《固体电子学研究与进展》1998年第3期291-301,共11页Research & Progress of SSE

基　　金：国家教委博士点基金;北京市科技新星计划基金;电子部5所国家重点实验室基金

摘　　要：用解析的方法模拟了T＝300K和77K时，fT和fmax与集电极电流密度Jc的关系，在大电流下考虑了异质结势垒效应的影响。模拟结果和用数值方法以及实验所得到的结果一致。同时，还建立了与之相应的Si／SiGeeb异质结和SiGe／Sibc异质结电容模型。The two importance parameters of frequency characteristics are cutoff frequence (f T ) and maximum frequency of oscillation (fmax ). In this paper,while effects of heterojunction barrier under high current density are taken into account, the dependence of fT and fmax on the collector current density at 300 K and77 K is modelled and simulated analytaically. The simulation results are in agreement with published numerical and experimental results. Meanwhile the heterojunction capacitance models for eb junction under forward voltage and for be junction under various collector currents are developed.

关 键 词：异质结 晶体管 截止频率 最高振荡频率 HBT 

分 类 号：TN322.8[电子电信—物理电子学]