富硅量不同的富硅二氧化硅薄膜的光致发光研究  

Photoluminescence Study of Si Oxide Films With Different Si Rich Degrees

作　　者：马书懿[1,2] 秦国刚[1,2] 马振昌[1,2] 宗婉华[1,2] 吴正龙[3,4] 姚光庆[3,4] 孟祥提[5] 

机构地区：[1]北京大学物理系 [2]电子工业部第十三研究所 [3]北京师范大学测试中心 [4]北京大学化学系 [5]清华大学核能技术设计研究院

出　　处：《Journal of Semiconductors》1998年第10期740-744,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：以硅－二氧化硅复合靶作为溅射靶，改变靶上硅与总靶面积比为０％，７％，１０％，２０％和３０％，用射频磁控溅射方法在ｐ型硅衬底上淀积了五种富硅量不同的二氧化硅薄膜．所有样品都在３００℃氮气氛中退火３０分钟．通过Ｘ射线光电子能谱、光吸收和光致发光测量确定出：随着硅在溅射靶中面积比的增加，所制备的氧化硅薄膜中纯硅（纳米硅）的量在增加，纳米硅粒的平均光学带隙在减小；但不同富硅量的二氧化硅膜的光致发光谱峰都接近于１．９ｅＶ，随硅在溅射靶中面积比增加，发光峰有很小的红移，其红移量远小于纳米硅粒的平均光学带隙的减少量．以上实验结果与量子限制模型矛盾，却可用量子限制－发光中心模型解释．Abstract Using Si and SiO 2 composite sputtering targets with the Si wafers in the targets having percentage areas of 0%, 7%, 10%, 20% and 30%, five types of Si oxide films with different Si rich degrees were deposited on p type Si substrates by the RF magnetron sputtering technique. All these samples were annealed in a N 2 ambient at 300℃ for 30min. X ray photoelectronic spectrometer, optical absorption, and photoluminescence measurements have been done on the samples. The pure Si amounts in Si rich Si oxide films increase and the average optical gap of nanometer Si particles decreases with the percentage area of the Si wafer in the sputtering target increasing; The PL peaks of all the Si oxide films with different Si rich degrees are located at almost the same wavelength of 660nm(1 9eV). The PL peak positions show a very little redshift with the percentage area of the Si wafer in the sputtering target increasing, and the redshift is much smaller than the reduction of the average optical gap of nanometer Si particles. The experimental facts are inconsistent with the predication of the quantum confinement model, but can be explained by the quantum confinement/luminescence center model.

关 键 词：富硅二氧化硅 氧化硅薄膜 光致发光 

分 类 号：TN383.2[电子电信—物理电子学] TN304.21