Cr掺杂ZnO薄膜的制备及磁性机制研究  

Study of preparation and magnetic mechanism in Cr doped ZnO film

作　　者：李杰[1] 朱珊珊[1] 陈希明[1] 程强[1] 付长凤[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384

出　　处：《天津理工大学学报》2009年第5期28-31,共4页Journal of Tianjin University of Technology

基　　金：天津市重点自然科学基金(06YFJZJC00100)

摘　　要：采用磁控交替溅射方法以及真空退火处理制备了Zn1-xCrxO薄膜,采用X射线衍射、X射线光电子能谱、物理性质测量仪对样品的结构、表面形态以及磁学性质进行了测试与分析.测试结果表明所有掺杂样品在室温下均具有微弱的铁磁性,并初步给出了其磁性机制.In this paper Cr-doped ZnO thin films were prepared by magnetron sputtering and annealed in vacuum. The sample＇s structure, surface composition and magnetization behaviors were further measured by X-ray diffraction, XPS and PPMS. The result suggests that the Cr doped ZnO films have room-temperature ferromagnetism and it＇s magnetic mechanism were study.

关 键 词：稀磁半导体 磁性机制 氧化锌 磁控溅射法 

分 类 号：TN304.055[电子电信—物理电子学]