基于SOI的蓝紫光探测器的设计  

Design of Blue/Violet Photodetectors on SOI Substrate

作　　者：韩志涛[1,2] 褚金奎[1,2] 孟凡涛[1,2] 郭庆[1,2] 

机构地区：[1]大连理工大学辽宁省微纳米技术及系统重点实验室,辽宁大连116024 [2]大连理工大学微系统与微制造辽宁省高校重点实验室,辽宁大连116024

出　　处：《半导体光电》2009年第5期656-659,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2006CB300407)

摘　　要：针对仿生微纳导航传感器对380～520nm波长的探测要求,从Lambert定理出发,设计了一种蓝紫光探测器,并对器件的结构和工艺进行了优化分析。利用SOI硅片上薄的单晶硅层,实现了较高的蓝紫光响应度,同时抑制了可见光中的长波和近红外光的响应度。当SOI硅片的器件层厚度为3μm时,450nm波长的响应度为0.348A/W,900nm波长的响应度为0.054A/W。数值计算和理论分析表明,设计的器件是一种高性能的蓝紫光敏感光电探测器。According to the requirement of detecting the wavelength of 380-520 nm of the bionic micro-nano navigation sensor, a blue/violet sensitive silicon photodetector based on Lambert Law was proposed. The structure and process were optimized and analyzed. By taking advantage of the thin layer of SOI wafer, the detector repressed the responsivity of longer wavelength in the visible and near-infrared range while maintaining a high blue/violet responsivity. When the thickness of the device layer of the SOI wafer was 5μm, the responsivities of 2 - 450 nm and λ=900 nm were 0. 348 A/W and 0. 054 A/W respectively. Numerical calculation and theoretical analysis show that the designed device is a high performance photodetector with high blue/violet responsivity.

关 键 词：光电探测器 SOI硅片 光谱响应 减反射膜 

分 类 号：TN366[电子电信—物理电子学]