X波段大栅宽高输出功率AlGaN/GaN HEMT的研究  

Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band

作　　者：顾卫东[1] 张志国[1,2] 

机构地区：[1]中国电子科技集团公司第十三研究所,专用集成电路国家级重点实验室,石家庄050051 [2]西安电子科技大学微电子学院,西安710071

出　　处：《半导体技术》2009年第11期1082-1084,共3页Semiconductor Technology

摘　　要：利用MOCVD技术研制了国产SiC衬底的GaN HEMT外延材料,方块电阻小于260Ω/□,迁移率最大值达到2130 cm2V-1s-1,方块电阻和迁移率不均匀性小于3%,采用新的器件栅结构和高应力SiN钝化技术,降低了大栅宽器件栅泄漏电流,提高了工作电压。研制的总栅宽为25.3 mm的四胞内匹配器件X波段输出功率达到141.25 W,线性增益大于12 dB,PAE达到41.4%。A GaN epi-wafer with domestic SiC substrate was fabricated.Sheet resistance and highest mobility are 260 Ω/□ and 2 130 cm2V-1s-1and un-uniformity is less than 3%.The leakage current of gate was depressed,and the breakdown voltage was increased by new gate structure and high stress SiN passivation.The total gate-width of internally-matched GaN HEMTs is 6.32 mm×4,delivers a CW saturation output power of 141.25 W,power gain is 12 dB,power added efficiency is 41.4% at X band.

关 键 词：ALGAN/GAN HEMT 大栅宽 高电压 高输出功率 

分 类 号：TN323.4[电子电信—物理电子学]