静电感应晶闸管的负阻转折特性分析  

Analysis of SITHs Negative-Resistance Characteristic

作　　者：张荣[1] 刘肃[1] 李海蓉[1] 

机构地区：[1]兰州大学物理科学与技术学院静电感应器件研究所,兰州730000

出　　处：《半导体技术》2009年第11期1088-1091,共4页Semiconductor Technology

摘　　要：描述了静电感应晶闸管(SITH)的优点、应用前景、结构特点及负阻转折特性。从SITH的作用机理出发,分别分析了导致负阻转折出现的几种重要的物理效应,如电导调制效应、空间电荷效应和复合效应以及载流子寿命的变化等,分析几种物理效应综合作用的过程。得到SITH的负阻转折属于高电平下空间电荷效应和复合效应共同限制的双注入问题,是几种重要物理效应共同作用的结果。The advantages and structures of static induction thyristor （SITH） were described, and the negative-resistance was researched. Based on the mechanism of SITH, the physical effects in the process such as space charge effect and recombination effect, variation of lifetime, especially conductivity modulation effect in light doping area were analyzed. It reveals that the negative-resistance characteristic phenomena of SITH is the consequence of high-level injection, also considered as the double injection limited by space charge effect and recombination effect in high voltage level. It is the consequence of several important physical effects.

关 键 词：静电感应晶闸管 负阻转折特性 双注入 高电平 复合效应 

分 类 号：TN386.7[电子电信—物理电子学]