决定AlGaInP高亮度发光二极管光提取效率的主要因素  

DETERMINANTS OF LIGHT EXTRACTION EFFICIENCY FOR AlGaInP HIGH BRIGHTNESS LIGHT EMITTING DIODES

作　　者：王国宏[1] 彭怀德[1] 马骁宇[1] 王树堂[1] 李玉璋[1] 陈良惠[1] 

机构地区：[1]光电子器件国家工程研究中心中国科学院半导体研究所

出　　处：《光子学报》1998年第10期952-957,共6页Acta Photonica Sinica

摘　　要：影响发光二极管光提取效率的主要因素有：出光表面状态、上电极和体内吸收．对于ＡｌＧａＩｎＰ高亮度发光二极管体内吸收主要是衬底和发光区的吸收．一般采用出光表面粗化、窗口层、ＤＢＲ反射器等措施来提高光提取效率．本文以自发辐射随机分布模型为基础，以ＡｌＧａＩｎＰ高亮度发光二极管典型结构的各种参数为依据，从理论上分析了这几种主要措施对光提取效率的影响．s The determinants of light extraction efficiency for light emitting diodes include:the status of light output surface,light absorption of anode and diode bulk.For AlGaInP highbrightness light emitting diodes the bulk absorption mainly caused by the GaAs substrate and active layer.Surface roughness,window layer and DBR reflector were usually employed to raise the light extraction efficiency,Effects of these measurements were discussed theoretically based on the model of random distribution of spontaneous emission and typical structure of AlGaInP highbrightness light emitting diodes.

关 键 词：ALGAINP 高亮度 发光二极管 光提取效率 

分 类 号：TN364.2[电子电信—物理电子学]