C-SiC-TiC-TiB_2复合材料等温氧化行为研究  

Isothermal Oxidation Behavior of C SiC TiC TiB 2 Composite

作　　者：颜冲[1] 肖汉宁[1] 彭文琴[1] 杨巧勤[1] 李绍禄[1] 

机构地区：[1]湖南大学

出　　处：《材料开发与应用》1998年第5期5-9,共5页Development and Application of Materials

基　　金：国家自然科学基金

摘　　要：对原位合成的（Ｃ－ＳｉＣ－ＴｉＣ－ＴｉＢ２）碳／陶复合材料的等温抗氧化性能进行了研究。结果表明，该材料的氧化增重和失重主要取决于碳相和陶瓷相的氧化速率和氧化层的结构特征。该材料表现出优良的抗氧化能力，这归结于在８００℃时ＴｉＢ２优先氧化，８００～１０００℃时其表面生成了一层致密的硼硅酸盐玻璃，以及在１２００℃下ＴｉＯ２晶粒包裹在其表面。The isothermal oxidation resistance of C SiC TiC TiB 2 composite prepared by in situ synthesis was studied. It is found that both weight gain and loss of the composite essentially depends on the oxidation ratios of carbon and ceramics and the characteristics of oxidized surface. The composite presents an excellent oxidation resistance,which is ascribed that TiB 2 is preferentially oxidized at 800℃, borosilicate glass leads to formation of a dense oxide film on the surface from 800℃ to 1000℃, and TiO 2 grains densely wrap up the surface at 1200℃.

关 键 词：碳/陶 复合材料 抗氧化性 陶瓷材料 氧化机理 

分 类 号：TB332.03[一般工业技术—材料科学与工程]