掺碳锗硅合金最新研究进展  

Present Status of Research in the Effect of Carbon on SiGe Alloys

作　　者：亓震[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《材料科学与工程》1998年第3期22-25,共4页Materials Science and Engineering

摘　　要：ＳｉＧｅＣ三元合金近几年来受到人们的广泛关注，碳的加入为Ｓｉ－Ｇｅ系统在能带和应变工程上提供了更大的灵活性。本文对碳加入锗硅材料中后应变的缓解及碳对合金能带结构的影响进行了概述，并对其机理做了总结。SiGeC alloys have attracted considerable attention over the past few years.The incorporation of carbon into Si Ge system provides an additional degree of freedom for band gap and strain engineering.In this paper,the strain compensation of SiGe alloys with the introduction of carbon and the influence of carbon on the band structure are summarized,and their mechanism are discussed.

关 键 词：能带结构 价带补偿 硅锗碳合金 

分 类 号：TN304.26[电子电信—物理电子学] O471[理学—半导体物理]