国产ITO靶材的镀膜工艺研究  

STUDIES ON FILM PLATING PROCESS OF DOMESTIC ITO TARGET

作　　者：彭传才[1,2] 黄广连 胡云慧[1,2] 曹志刚 余圣发[1,2] 魏敏 易可可[1,2] 姚吉升 唐三川[1,2] 陈坚 

机构地区：[1]国防科技大学 [2]长沙矿冶研究院

出　　处：《矿冶工程》1998年第3期61-63,共3页Mining and Metallurgical Engineering

摘　　要：介绍了国产ＩＴＯ靶材磁控溅射制备ＩＴＯ膜的工艺实验。实验结果表明，国产ＩＴＯ靶材具有良好的工艺稳定性和重现性，在优选镀膜工艺参数条件下，获得了性能优良的ＩＴＯ透明导电膜，并且在室温基片上也获得了满意的结果。A description is given of the process and test of manufacturing of ITO film from domestic ITO material by magnetion sputtering. The results indicate that this target possesses good stability and reproducibility. ITO film with good electrical and optical properties has been prepared at selected parameters. Satisfactory ITO film can also form on substrate even at room temperature.

关 键 词：ITO靶 ITO膜 放电特性 氧分压 基片温度 

分 类 号：O484[理学—固体物理]