密闭热系统中拉制硅单晶  

DRAWING OF SINGLE CRYSTAL SILICON IN CLOSED THERMAL SYSTEM

作　　者：叶祖超 陆荣 

机构地区：[1]上海硅材料厂,上海201617

出　　处：《上海有色金属》1998年第3期102-105,共4页Shanghai Nonferrous Metals

摘　　要：本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。试验表明：密闭拉晶不仅有利于减少电耗和氢气消耗，而且可有效地降低硅单晶的氧含量和热氧化层错密度。文中还对密闭系统的材料、形状、放置及作用作了具体描述。The drawing of single crystal silicon in a closed thermal system is described. It is shown through theexperiment that drawing in a closed system will help reduce the consumptions of electric power and argon gas and reduce theoxygen concentration and the density of oxidation induced stacking faults of single crystal silicon. The materials used,shape, arrangement and functions of the closed system are discribed in detail.

关 键 词：硅单晶 热系统 拉晶工艺 硅中氧 热氧化层错 

分 类 号：TN304.12[电子电信—物理电子学]