金刚石表面离子束金属化研究  

Metallization of Diamond by Ion Beam Enhanced Deposition

作　　者：李国卿[1] 张家良[1] 牟宗信[1] 郭宝海[1] 黄宁表[2] 李述汤[2] 何浩培 刘悦[3] 刘会民[3] 花吉珍 陈季文[3] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室 [2]香港城市大学 [3]电子工业部第十三研究所

出　　处：《半导体情报》1998年第5期44-47,共4页Semiconductor Information

摘　　要：采用离子束增强沉积技术对金刚石热沉材料表面金属化进行了研究，制备了Ｔｉ／Ｎｉ／ＡｕＩｎ和Ｃｕ／ＡｕＩｎ金属化体系。采用俄歇、ＥＤＳ、ＸＲＤ和ＳＣＲＡＴＣＨ方法对膜层和界面进行了分析。The results of metallization of diamond hit sick by ion beam enhanced deposition were reported in this paper.The novel metalliszation schemes with Ti/Ni/AuIn and Cu/AuIn were developed.The surface and interface of the metallization layer were ana lysed by use of Auger,EDS,XRD and SCRATCH methods.

关 键 词：金刚石 表面金属化 离子束增强沉积 

分 类 号：TN304.05[电子电信—物理电子学] TN304.18