一种基于电荷泵技术的界面态横向分布测量方法  

Novel Measurement Method for Lateral Distribution of Interface States Based on Charge Pumping Technique

作　　者：杨晓东[1] 田立林[1] 陈文松[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《Journal of Semiconductors》1998年第11期834-840,共7页半导体学报（英文版）

摘　　要：本文以电荷泵技术为测量手段，结合数值计算，提出了一种新的测量界面态横向分布的方法．与传统方法相比具有理论模型较完善、测量中不引入新的蜕变、易于实现的特点，适用于研究短沟道器件的热载流子蜕变效应．用该方法对１．２μｍＬＤＤ结构ｎ－ＭＯＳＦＥＴ进行了研究，得到了应力后漏端附近产生的界面态的横向分布以及应力后阈值电压、平带电压的变化。Abstract Based on the charge pumping technique combined with numerical calculations, a novel measurement method for lateral distribution of interface states is presented. Compared with traditional charge pumping technique, ours is characterized with more accurate theoretical model and easier to conduct. Furthermore, it does not introduce new degradation during measurement. So it is suitable for the study of hot carrier degradation effects in short channel devices. Based on our technique, the lateral distribution of generated interface states near drain junction and the variation of both threshold voltage and flatband voltage after stress for a 1 2μm LDD n MOSFET is obtained, which can further determine the quantity and location of oxide traps generated by hot carrier injection.

关 键 词：电荷泵技术 界面态 设计 IC VLSI/ULSI 

分 类 号：TN470.2[电子电信—微电子学与固体电子学]