半导体桥(SCB)的研究  

Study of Semiconductor Bridge

作　　者：周蓉[1] 岳素格[1] 秦卉芊 张玉才[1] 胡思福[1] 

机构地区：[1]电子科技大学微电子科学与工程系

出　　处：《Journal of Semiconductors》1998年第11期857-860,共4页半导体学报（英文版）

摘　　要：目前常用的点火器Ｎｉ－Ｃｒ金属桥丝（热桥丝）体积较大，点火能量高（几十毫焦），作用时间长（几毫秒），且易误触发．本文中采用半导体器件和集成电路技术研制的新一代点火器——半导体桥（ＳＣＢ）体积小（为热桥丝三十分之一），结构上兼有Ｓｉ桥区倒圆点和Ｔｉ、Ａｌ金属导体倒圆点两大特点，其点火临界能量可降低到３～５ｍＪ，作用时间可缩短到５μｓ，从而能快速产生热等离子体来引爆猛炸药．同时，ＳＣＢ还具有较高的可靠性和安全性，其安全电流大于１．５Ａ．本文分析了ＳＣＢ工作原理，并研究了ＳＣＢ的结构对临界能量、点火作用时间、可靠性和安全电流的影响。Abstract Commonly used to ignite energetic powders such as pyrotechnics, propellants etc. are small metal bridge wires,which have defects such as large volume, high input energy, long function time and instability. In this paper, we describe a new means for igniting explosive materials using a semiconductor bridge (SCB), whose structure has waist points of the bridge along the current direction and incorporates points on the aluminum lands. This SCB,which is one thirtieth smaller in volume than a conventional hot wires, can decrease input energy to 3￣5mJ, shorten function time to 5￣8μs and can pass 1 5A current in 5 seconds without function. We describe the SCB layout and analyze its mechanics emphasizing on its imput energy and function time. The experimental results are also discussed.

关 键 词：半导体桥 SCB 点火器 半导体技术 

分 类 号：TN302[电子电信—物理电子学] TQ565[化学工程—炸药化工]