生长在尖晶石衬底上的GaN外延层的喇曼散射研究  

Raman Scattering of GaN Epilayer Grown on MgAl 2O 4 Substrate

作　　者：李国华[1,2] 韩和相[1,2] 丁琨[1,2] 汪兆平[1,2] 段树坤[3,2] 

机构地区：[1]半导体超晶格国家重点实验室 [2]中国科学院半导体研究所 [3]集成光电子学国家实验室

出　　处：《Journal of Semiconductors》1998年第11期865-870,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：在室温下测量了用ＭＯＶＰＥ方法生长在尖晶石（ＭｇＡｌ２Ｏ４）衬底上的ＧａＮ外延层的一阶喇曼光谱．应用各种背散射和９０°散射配置，测得了除低频Ｅ２模外所有ＧａＮ的喇曼活性光学声子模．并且在Ｘ（Ｚ，Ｘ）Ｚ和Ｘ（Ｙ，Ｙ）Ｚ配置下观测到了由Ａ１和Ｅ２模混合形成的准ＴＯ和准ＬＯ模．Abstract First order Raman spectra of GaN epilayer grown by MOVPE on MgAl 2O 4 substrate were measured at room temperature. By using various back and rightangle scattering geometry, all symmetry allowed optical phonons were observed, except the low frequancy E 2 mode. The quasitransverse Q (TO) and quasilongitudinal Q (LO) modes were also observed in the X(Z,X)Z and X(Y,Y)Z configurations, which have the mixed A 1 and E 1 symmetry character. All the results are in good agreement with the group theoretical selection rules.

关 键 词：氮化镓 外延生长 喇曼散射 尖晶石衬底 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054