紫外敏感硅光伏二极管的正向特性  

Forward characteristic of the silicon photovoltaic diode with sensitivity on ultraviolet

作　　者：龚道本[1] 

机构地区：[1]中南民族学院

出　　处：《半导体光电》1998年第5期314-317,共4页Semiconductor Optoelectronics

摘　　要：通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置Ｃ－Ｖ特性和Ｉ－Ｖ特性与一般ＰＮ结二极管的正向特性有明显地不同。文章在理论分析的基础上提出了该器件的一种新的模型—─两个背靠背的二极管和一个电阻的串联，能很好地解释该器件的正反向特性。It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.A new model of the device is presented by use of the series of two diodes and a resistor.The model can explain forward and backward characteristics of the device very well.

关 键 词：肖特基势垒 二极管 势垒电容 整流接触 

分 类 号：TN311[电子电信—物理电子学]