MEMS光栅光调制器与CMOS驱动单片集成的研究  

Study on Monolithic Integration of Grating Light Modulator and CMOS Driver Circuits

作　　者：金珠[1,2] 温志渝[1,2] 张智海[1,2] 黄尚廉[1,2] 

机构地区：[1]重庆大学新型纳米器件与系统技术国家重点学科实验室,重庆400044 [2]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《电子学报》2009年第11期2515-2519,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.60708017);重庆市院士基金(No.CSTC;2008BC3002)

摘　　要：为了消除光栅光调制器阵列的交叉效应,提出利用post-CMOS工艺将光栅光调制器与CMOS驱动单片集成.介绍了单片集成器件的工作原理,详细分析了单片集成器件的关键参数.通过分析表明,在满足调制器响应频率条件下,通过改变悬臂梁的各个参数可以减小调制器的弹性系数,从而降低光栅光调制器的工作电压;在满足开关速度的条件下,较大存储电容具有更好的电压保持特性.利用中芯国际提供的0.18μm工艺设计包完成该单片集成器件的物理版图设计和仿真.最后,通过实验测得该器件的上升沿和下降沿时间分别为:36.8ns和36.4ns,且经过16.73ms的保持时间后压降为2.1V.实验结果与仿真结果具有较好的一致性,结果表明:加工的单片集成器件具有较快的开关速度和较好的电压保持特性,能够满足设计要求.In order to eliminate crosstalk of Grating Light Modulator （GLM） army, by using post-CMOS process, a monolithic integrated chip of GLM and CMOS driver circuit is presented. The operating principle of the monolithic integrated chip is introduced, and the key parameters which influence the performance of monolithic integrated chip are analyzed in detail. The analysis indicates that under the response frequency of GLM, the elastic coefficient can be reduced by changing cantilever＇ s parameters, which can reduce the operating voltage of GLM, and the voltage is holding better by increasing the storage capacitance when switch speed is satisfied. With 0. 18μm process design kit of SMIC, the monolithic integrated device is designed and simulated. Finally, the experiment results show that the rise-edge time and the fall-edge time are respectively 36.8ns and 36.4ns,the holding voltage reduces 2.1V after 16.73ms time.Experiment results and simulation results are consistent quite well,and the result indicates that the monolithic integrated device has rather quick switch speed and a better characteristic of holding voltage.

关 键 词：微机电系统 光栅光调制器 CMOS驱动电路 单片集成 

分 类 号：TN29[电子电信—物理电子学] TN402