等离子体发射监控系统参与的中频孪生反应磁控溅射沉积TiO_2薄膜的实验研究  

Plasma Emission Monitoring and TiO_2 Films Growth by Mid-Frequency Dual Magnetron Reactive Sputtering

作　　者：赵嘉学[1] 王军生[1] 

机构地区：[1]核工业西南物理研究院,成都610041

出　　处：《真空科学与技术学报》2009年第6期690-694,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：在一个孪生靶实验装置上进行了中频反应磁控溅射沉积TiO2薄膜的工艺实验。得到了一组真实的反应溅射TiO2薄膜的沉积速率和真空与反应气体流量之间关系的迟滞曲线(无等离子体发射监控系统Plasma Emission Monitoring,PEM)参与。介绍了PEM参与下的反应溅射TiO2的一些实验现象和结果,此时TiO2的沉积速率与PEM设定值呈很好的线性关系,反应溅射可以稳定在过渡态的任一工作点。设定值是PEM控制系统最关键的参数,直接决定着控制的可靠性、反应溅射速率以及薄膜的微观结构。结果表明,为了得到标准化学配比的反应物,PEM的设定值不能超过某个极限值。要在保证化学配比也就是反应物的成分或结构的前提下提高沉积速率才有意义。The TiO2 films were grown by mid-frequency dual rnagnetron reactive sputtering. The dedicated plasma emission monitoring （PEM） system was installed to control in real time the film growth conditions and to eliminate the hysteresis effect and target poisoning. The PEM set-point significantly affects the reliability of the film growth control, the deposition rote, and the microstmctures of the deposited compounds. The deposition rate should depend on the PEM set-point linearly, and the reactive sputtering can be well stabilized at any PEM set-point in the transition state. The experimental results show that there is a critical range of the PEM set-point for a specific compound film with a given stoichiometry, and that it makes no sense to increase the deposition rate at a PEM set-point beyond this critical range.

关 键 词：等离子体发射监控系统 中频孪生靶反应溅射 迟滞曲线 设定值 

分 类 号：TB43[一般工业技术]