退火对Al_2O_3薄膜结构和发光性能的影响  

Effect of Annealing on Structure and Fluorescence Property of Al_2O_3 Film

作　　者：范文宾[1] 李合琴[1] 邵林飞[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《红外》2009年第11期26-29,共4页Infrared

基　　金：国家自然科学基金(60806028);安徽省红外与低温等离子体重点实验室(2007C002107D);安徽省自然科学基金(090414182);973项目(2008CB717802)

摘　　要：氧化铝(Al_2O_3)薄膜具有许多优良的物理化学性能,在机械、光学及微电子等高科技领域有着广泛应用,一直受到人们的高度关注。但Al_2O_3具有多种物相形态,性质差别很大。因此研究不同结构对其发光性能的影响在Al_2O_3实际应用中有着重要意义。本文采用射频磁控溅射技术在单晶硅衬底上制备了Al_2O_3薄膜,并在氮气中进行了不同温度的退火,对比了退火前后薄膜的结构和光致发光特性。观察到了在384nm和401nm附近的两个荧光峰,这两个发光峰都是由色心引起的。随着退火温度的升高,Al_2O_3薄膜的结晶质量变好,同时荧光峰峰位发生了相应的变化,强度也发生了明显的变化。Aluminium oxide （Al2O3） thin films are widely used in mechanical, optical and microelectronic applications and have attracted more and more attention because of their excellent physical and chemical properties. However, Al2O3 has a variety of phases and their properties are different. So, the study of the effect of different structures on the luminenscence properties of Al2O3 is of significance in the practical application. The Al2O3 thin films are grown on silicon substrates by radio frequency （RF） magnetron sputtering and are annealed in the nitrogen gas at different temperatures. The struc- tures and photoluminescence （PL） spectra of these films axe compared with each other before and after annealing. Two fluorescence peaks are observed near 384nm and 401nm. Both fluorescence peaks are generated by the color center. With the increasing of annealing temperature, the crystallization of the films becomes better. At the same time, the position and intensity of the fluorescence peaks are changed correspondingly, too.

关 键 词：AL2O3薄膜 光致发光光谱 射频磁控溅射 红移 色心 

分 类 号：TG156.2[金属学及工艺—热处理] TB383.2[金属学及工艺—金属学]