VO_x薄膜的制备、电阻-温度特性及结构研究  

Preparing,Resistance-Temperature Characteristics and Structure of VO_x Thin Films

作　　者：邵林飞[1] 李合琴[1] 范文宾[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022

出　　处：《红外》2009年第11期30-34,共5页Infrared

基　　金：安徽省红外与低温等离子体重点实验室(2007C002107D);安徽省自然科学基金(090414182)

摘　　要：VO_2是一种热致相变材料。发生相变时,VO_2的电阻、红外光透过率、反射率都会发生显著变化。采用直流反应磁控溅射法,通过改变氧氩比(O_2:Ar)、工作气压、衬底温度等制备工艺参数,研究了工艺参数对VO_x薄膜的结构、电阻-温度性能的影响。结果表明,当氧氩比为1.0:15、工作气压为2.0Pa时,制备的薄膜中VO_2的含量较多;衬底温度为250℃时,制备的VO_x薄膜的电阻-温度突变性能最佳。Vanadium dioxide （VO2） is a kind of thermochromatic material. When phase transformation occurs, its resistance, optical transmittance and reflectivity will be changed obviously. Some preparing parameters, such as gas flow ratio of argon to oxygen, sputtering atmospheric pressure and substrate temperature, are changed by using a direct current reactive magnetron sputtering method. The effect of those preparing parameters on the structure and resistance-temperature characteristics of a VO2 film is studied. The result shows that when the ratio of argon to oxygen is 1.0 ： 15 and the gas pressure is 2.0Pa, the prepared film contains more VO2; and when the substrate temperature is 250℃, the prepared VO2 film has its best resistance-temperature abrupt capability.

关 键 词：VO2薄膜 直流反应磁控溅射 沉积条件 电阻突变 

分 类 号：TB383.2[一般工业技术—材料科学与工程]