掺磷纳米硅薄膜的制备及介观力学性质与介观接触电阻的研究  

Mesoscopic study on mechanic properties and contact resistance of P-doped Si:H nanofilms

作　　者：王君雄[1] 丁建宁[1,2] 程广贵[1] 袁宁一[2] 何宇亮[1] 坎标[1] 潘海滨[1] 

机构地区：[1]江苏大学微纳米科学技术研究中心,镇江江苏212013 [2]江苏工业学院,常州江苏213016

出　　处：《真空》2009年第6期47-50,共4页Vacuum

摘　　要：采用PECVD法制备的纳米硅薄膜是一种具有特殊性能的人工材料。它是由大量具有纳米量级的硅微晶粒构成,纳米硅晶粒镶嵌在由非晶硅构成网络中,其晶粒所占的体积百分比为XC≈50%,从而决定了其特有的性质。本文通过严格控制薄膜生长的工艺参数,得到了掺磷纳米硅薄膜,并通过原位纳米力学电学测试系统对其力学和电学性质进行测试,发现掺磷纳米硅薄膜的纳米硬度为5GPa,而其杨氏模量随着压入深度的增加而增大,其接触电阻与薄膜的结构密切相关。这些属性对于纳米硅薄膜微器件的制备具有重要的参考意义。As a special coating material, the Si：H nano films were prepared by PECVD, which are composed of lots of Si nanoparticlas inlaid in an amorphous silicon network where the volume fraction of Si nanoparticles Xc= 50%. Based on the Si： H nanofilms, the P-doped Si：H nanofilms were prepared via strict control of film growth process parameters, to which the mechanical and electrical properties were tested. The results showed that the hardness of the P-doped Si：H nanofilms comes up to 5GPa, and their Young＇s modulus increases with indentation depth. Their contact resistance relates closely to the microstructure of the nanofilms. Those properties found are of significance as reference to the production of the devices using Si： H nanofilms.

关 键 词：纳米硅薄膜 掺磷 纳米接触电流 纳米压痕 

分 类 号：O484.1[理学—固体物理]