芯片封装中铜丝键合技术的研究进展  

Research Progress in Copper Wire Bonding Technology for Chip Packaging

作　　者：王彩媛[1] 孙荣禄[1,2] 

机构地区：[1]天津工业大学机械电子学院,天津300160 [2]天津市现代机电装备技术重点实验室,天津300160

出　　处：《材料导报（纳米与新材料专辑）》2009年第2期206-209,共4页

基　　金：天津市自然科学基金资助项目(043603211)

摘　　要：铜线具有优良的机械、电、热性能,用其代替金线可以缩小焊接间距、提高芯片频率和可靠性。介绍了引线键合工艺的概念、基本形式和工艺参数;针对铜丝易氧化的特性指出,焊接时必须采用特殊的防氧化工艺,以改善其焊接性能;最后对铜丝键合可靠性及主要失效模式进行了分析。The copper wire has a good mechanical, electrical and thermal properity. Instead of gold wire,it can be used in wire bonding to shorten the spacing of bonding, and to enhance frequency and reliability of chip. The research on concept of wire bonding process, the basic form and process parameters are reviewed in this paper. Aiming at oxidation characteristics of copper wire, the special anti-oxidation process, which can improve its welding performance must be used in welding. Finally, reliability and some main failure mechanisms of copper wire bonding are analyzed.

关 键 词：引线键合 铜丝球焊 IC封装 可靠性测试 

分 类 号：TN16[电子电信—物理电子学] TN405