铁电薄膜及其在存储器件中的应用研究现状  

Ferroelectric Thin Films and Their Applications in Memory Devices

作　　者：李惠琴[1] 刘敬松[1] 

机构地区：[1]西南科技大学材料科学与工程学院,绵阳621010

出　　处：《材料导报（纳米与新材料专辑）》2009年第2期341-346,共6页

基　　金：西南科技大学博士研究基金(08zx7111)

摘　　要：概述了铁电薄膜在非易失存储器中的应用研究现状,将铁电存储器与其他类型存储器进行了比较,针对铁电薄膜在存储器中的应用,探讨了铁电薄膜制备工艺与半导体工艺兼容性、极化疲劳、尺寸效应等几方面的问题,指出了当前研究的重点。The applications of ferroelectric thin films, especially the application in non-volatile random access memories are reviewed in this paper. The differences between ferroelectric random access memories and other type memories are analyzed. The processing compatibility between ferroelectric thin films and semiconductor technology, polarization fatigue, size effects are discussed in terms of the ferroelectric thin film application in memories, and they are thought to be the priority research topics at present.

关 键 词：铁电薄膜 极化疲劳 制备工艺 半导体工艺 

分 类 号：TN304.9[电子电信—物理电子学]