掺氮ZnO薄膜的光致发光特性研究  

Study on the Photoluminescence Properties of N-Doped ZnO Films

作　　者：沈洪雪[1] 李合琴[1] 方广志[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《压电与声光》2009年第6期881-884,共4页Piezoelectrics & Acoustooptics

基　　金：安徽省自然科学基金资助项目(03044703);安徽省红外与低温等离子体重点实验室基金资助项目(2007C002107D)

摘　　要：采用射频磁控溅射技术,通过改变O2∶N2比在玻璃衬底上制备不同浓度N掺杂的ZnO薄膜,研究了掺杂薄膜的光致发光(PL)特性。观察到370～380nm、390～405nm附近的2个荧光峰。结果表明,随着薄膜中N掺杂量的不同,荧光峰峰位发生了相应的变化,强度也发生了明显的变化。当Ar∶O2∶N2为15∶7∶8时,薄膜中N含量最多,分别在374nm、391nm处出现了发光峰且发光强度最佳,此时薄膜已明显表现出p型ZnO薄膜的特征。The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O2 to N2. Their photoluminescence （PL） properties were measured. Two peaks were observed respectively around 370 nm to 380 nm and 390 nm to 405 nm. The results showed that the intensity and positions of these peaks are changed with different N contents. There is the most N content in the film when the ration of Ar∶O2∶N2 is 15∶7∶8,at the same time,the peaks located in 374 nm and 391 nm are the highest intensity,the characteristic of p-type ZnO films has already appeared.

关 键 词：P型ZNO薄膜 N受主掺杂 荧光光谱 红移 

分 类 号：TB43[一般工业技术]