Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition  

作　　者：许晟瑞 周小伟 郝跃 毛维 张进城 张忠芬 白琳 张金凤 李志明 

机构地区：[1]Key Laboratory of Fundamental Sciencefor National on Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University [2]Xi'an Division of China Academy of Space Technology

出　　处：《Journal of Semiconductors》2009年第11期14-16,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Nos.60736033,60676048);the National Key Science and Technology Special Project (No.2008ZX01002-003)

摘　　要：Nonpolar （1120） a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane （1102） sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction （HRXRD）, atomic force microscopy （AFM） and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.Nonpolar （1120） a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane （1102） sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction （HRXRD）, atomic force microscopy （AFM） and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.

关 键 词：GAN ANISOTROPIC HRXRD NONPOLAR 

分 类 号：TN304.055[电子电信—物理电子学]