Performance of pentacene-based organic field effect transistors using different polymer gate dielectrics  

作　　者：吴仁磊 程晓曼 郑宏 印寿根 

机构地区：[1]Institute of Material Physics,Key Laboratory on Display Material and Photoelectric Devices,Ministry of Education,Tianjin Key Laboratory of Photoelectric Materials and Device,Tianjin University of Technology [2]School of Science,Tianjin University of Technology

出　　处：《Optoelectronics Letters》2009年第6期409-412,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60676051);the Natural Science Foundation of Tianjin(No.07JCYBJC12700);the Fund of the Key Discipline of Material Physics and Chemistry of Tianjin

摘　　要：Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.Pentacene-based organic field effect transistors（OFETs） are fabricated using poly（methyl methacrylate）（PMMA） and polyimide（PI） as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10^-2 cm^2 /Vs,-28 V,and 1 ×10^3 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10^-3cm^2 /Vs,-21 V,and 2 ×10^2 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.

关 键 词：场效应晶体管 电性能测试 栅介质 并五苯 聚(甲基丙烯酸甲酯) 聚合物 聚甲基丙烯酸甲酯 聚酰亚胺 

分 类 号：TN386[电子电信—物理电子学] V448.222[航空宇航科学与技术—飞行器设计]