MEMS圆片级封装用Cu-Sn低温键合机理与工艺研究  

Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

作　　者：荣毅博[1] 蔡坚[1] 王水弟[1] 贾松良[1] 

机构地区：[1]清华信息科学与技术国家实验室(筹),北京100084

出　　处：《半导体技术》2009年第12期1181-1184,共4页Semiconductor Technology

基　　金：国家高技术研究发展计划(863计划;2009AA04Z321);国家重大科技专项(2009ZX02038)

摘　　要：研究了利用低温等温凝固技术实现Cu-Sn键合在MEMS圆片级封装中的应用。基于Cu-Sn二元平衡相图,对键合层结构进行了设计,同时设计了用于测试的键合图形,并对设计的键合结构进行了流片实验。通过对圆片制作及键合等工艺的一系列优化,在250℃的低温条件下生成了熔点为415℃的金属间化合物,获得了良好的键合层。得到的键合样品剪切力强度值达到了GJB548B-2005标准的要求。研究表明,Cu-Sn等温凝固键合技术具有实际应用的潜力。A new wafer bonding technique was described based on Cu-Sn isothermal solidification （IS） technology for MEMS wafer-level packaging. Based on equilibrium phase diagram of Cu-Sn alloy, the structure of the intermediate multi-layers and bonding patterns were designed, and the bonding process was optimized. Bonding layer which was almost void-free, with a melting point of 415 ℃, were successfully made at 250℃. The bonding layer can meet the requirements of the shear strength test specified by GJB548B-2005. The results show that the Cu-Sn IS technology has great potential of application.

关 键 词：等温凝固 Cu-Sn 键合 圆片级封装 剪切力 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]