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作 者:佟丽英[1] 赵权[1] 史继祥[1] 王聪[1] 李亚光[1]
机构地区:[1]中国电子科技集团公司第四十六研究所,天津300220
出 处:《半导体技术》2009年第12期1213-1215,共3页Semiconductor Technology
摘 要:采取化学染色法对B,Al和P杂质扩散形成的结深进行检测,通过实验不同浓度染色液的腐蚀特性,选择易于控制和重复性好的染色腐蚀液。同时采用扩展电阻法对同一个样品的结深进行测试,以扩展电阻法所得结果为标准,与染色法的测量结果进行对比,根据测试结果与理论分析,对染色法的测试结果进行修正,确定P扩散结深的测试系数。The coloration solution was applied to determined the width of diffused-junction, in order to distinguish the speciaality of etching, different concentration coloration were tested to B, A1 and P impurity diffused-junction for electing the proper coloration which had good repetitiveness and could be easily controlled. Taking the sp compared it with the result reading resistance probe for standard, the same sample were measured, then of coloration solution method. Based on the test results and the theory analysis, the calibrate diffused-junction depth of B, A1 and P measured by coloration were modified to elicit the depth coefficient of P diffused-junction.
分 类 号:TN304.07[电子电信—物理电子学]
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