GaAs MMIC宽带双平衡混频器的研制  

Design of GaAs MMIC Broadband Doubly-Balanced Mixer

作　　者：赵宇[1] 吴洪江[1] 高学邦[1] 王绍东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第12期1220-1223,共4页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助项目(2009CB320200)

摘　　要：采用GaAs肖特基二极管工艺,设计并制造了一款宽带无源双平衡混频器,射频、本振频率为1.5~3.7 GHz,变频损耗小于10 dB,本振到射频隔离度大于35 dB,中频带宽DC^0.8 GHz。该混频器采用了环形二极管和螺旋式巴伦结构,在获得良好的变频损耗与隔离度的同时,显著减小了芯片面积,整体芯片尺寸为1.2 mm×1.2 mm。A broadband doubly-balanced mixers was designed and fabricated with GaAs Sehottky diode process. The mixer operates from 1.5 to 3.7 GHz, with conversion loss less than 10 dB and LO to RF isolation greater than 35 dB. The IF bandwidth is from DC to 0.8 GHz. The mixer employs ring diodes and spiral Balun structure for improving the conversion loss and port to port isolations. At one time, the chip size is reduced remarkably, only 1.2 mm × 1.2 mm.

关 键 词：混频器 双平衡 巴伦 变频损耗 肖特基二极管 

分 类 号：TN74[电子电信—电路与系统]