SiC泡沫陶瓷材料的高温氧化行为  

Oxidation Characteristics of Silicon Carbide Foam Ceramic at Elevated Temperature

作　　者：郑传伟[1] 杨振明[1] 田冲[1] 曹晓明[1] 张劲松[1] 

机构地区：[1]中科院金属研究所,辽宁沈阳110016

出　　处：《稀有金属材料与工程》2009年第A03期289-292,共4页Rare Metal Materials and Engineering

摘　　要：采用可控熔渗反应烧结法制备具有宏观三维连通结构的SiC泡沫陶瓷,研究了SiC泡沫在不同温度的氧气中的氧化行为。结果表明:在800～1300℃温度范围内,SiC泡沫陶瓷与块体SiC陶瓷类似,其氧化动力学曲线符合抛物线规律,氧化过程受氧化剂在氧化膜中的扩散控制,氧化膜结晶后材料的氧化速率显著降低。SiC foam ceramics with 3-D connected structures were prepared by macromolecule pyrogenation combined with reaction bonding methods. And their oxidation characteristics were studied at elevated temperature. The result indicates that the oxidation of SiC foam ceramics approximately accord with parabolic behavior at 800-1300 ℃ which indicates a diffusion-limited reaction. After silica scale crystallization, the oxidation process of SiC foam ceramics slow down remarkably.

关 键 词：SIC 泡沫陶瓷 氧化 结晶 

分 类 号：TB383.4[一般工业技术—材料科学与工程]